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A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs

dc.contributor.authorVasina, Petr
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorSikula, J.
dc.date.accessioned2021-10-01T09:34:09Z
dc.date.available2021-10-01T09:34:09Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3106
dc.sourceIIOimport
dc.titleA low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage23
dc.source.endpage27
dc.source.journalMicroelectronics Reliability
dc.source.issue1
dc.source.volume38
imec.availabilityPublished - open access


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