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SiGe vs. Si selective wet etchingfor Si gate-all-around

dc.contributor.authorKomori, Kana
dc.contributor.authorRip, Jens
dc.contributor.authorYoshida, Yukifumi
dc.contributor.authorWostyn, Kurt
dc.contributor.authorSebaai, Farid
dc.contributor.authorLiu, Wen Dar
dc.contributor.authorLee, Yi Chia
dc.contributor.authorSekiguchi, Ryo
dc.contributor.authorMertens, Hans
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-25T21:09:57Z
dc.date.available2021-10-25T21:09:57Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31072
dc.sourceIIOimport
dc.titleSiGe vs. Si selective wet etchingfor Si gate-all-around
dc.typeProceedings paper
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage107
dc.source.endpage112
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate2/09/2018
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://doi.org/10.4028/www.scientific.net/SSP.282.107
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 282


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