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Vapor-deposited octadecanethiol masking layer on copper to enable area selective Hf3N4 atomic layer deposition on dielectrics studied by in situ spectroscopic ellipsometry

dc.contributor.authorLecordier, Laurent
dc.contributor.authorHerregods, Sebastiaan
dc.contributor.authorArmini, Silvia
dc.date.accessioned2021-10-25T21:42:26Z
dc.date.available2021-10-25T21:42:26Z
dc.date.issued2018
dc.identifier.issn0734-2101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31140
dc.sourceIIOimport
dc.titleVapor-deposited octadecanethiol masking layer on copper to enable area selective Hf3N4 atomic layer deposition on dielectrics studied by in situ spectroscopic ellipsometry
dc.typeJournal article
dc.contributor.imecauthorHerregods, Sebastiaan
dc.contributor.imecauthorArmini, Silvia
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage31605
dc.source.journalJournal of Vacuum Science and Technology A
dc.source.issue3
dc.source.volume36
dc.identifier.urlhttps://avs.scitation.org/doi/full/10.1116/1.5025688
imec.availabilityPublished - open access


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