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TSV process-induced MOS reliability degradation

dc.contributor.authorLi, Yunlong
dc.contributor.authorStucchi, Michele
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.authorCroes, Kristof
dc.date.accessioned2021-10-25T22:03:05Z
dc.date.available2021-10-25T22:03:05Z
dc.date.issued2018-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31182
dc.sourceIIOimport
dc.titleTSV process-induced MOS reliability degradation
dc.typeProceedings paper
dc.contributor.imecauthorLi, Yunlong
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorCroes, Kristof
dc.contributor.orcidimecLi, Yunlong::0000-0003-4791-4013
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.source.peerreviewyes
dc.source.beginpage5B.5-1
dc.source.endpage5B.5-5
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate11/03/2018
dc.source.conferencelocationBurlingame, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8353610/
imec.availabilityPublished - imec


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