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In-situ investigation of the impact of externally applied vertical stress on III-V bipolar transistor

dc.contributor.authorLiu, Yefan
dc.contributor.authorHiblot, Gaspard
dc.contributor.authorGonzalez, Mario
dc.contributor.authorVanstreels, Kris
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorBadaroglu, Mustafa
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-25T22:18:55Z
dc.date.available2021-10-25T22:18:55Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31212
dc.sourceIIOimport
dc.titleIn-situ investigation of the impact of externally applied vertical stress on III-V bipolar transistor
dc.typeProceedings paper
dc.contributor.imecauthorLiu, Yefan
dc.contributor.imecauthorHiblot, Gaspard
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorVanstreels, Kris
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorBadaroglu, Mustafa
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecHiblot, Gaspard::0000-0002-3869-965X
dc.contributor.orcidimecVanstreels, Kris::0000-0002-4420-0966
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage408
dc.source.endpage411
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614573
imec.availabilityPublished - open access


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