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Relation between film thickness and surface doping of MoS2 based field effect transistors

dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-25T22:22:25Z
dc.date.available2021-10-25T22:22:25Z
dc.date.issued2018
dc.identifier.issn2166-532X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31219
dc.sourceIIOimport
dc.titleRelation between film thickness and surface doping of MoS2 based field effect transistors
dc.typeJournal article
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage58301
dc.source.journalAPL Materials
dc.source.issue5
dc.source.volume6
dc.identifier.urlhttp://aip.scitation.org/doi/full/10.1063/1.4996425
imec.availabilityPublished - imec


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