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Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

dc.contributor.authorMa, Jigang
dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorZhang, J. F.
dc.contributor.authorJi, Z.
dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGoux, Ludovic
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-25T22:39:56Z
dc.date.available2021-10-25T22:39:56Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31252
dc.sourceIIOimport
dc.titleInvestigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage970
dc.source.endpage977
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8276315/
imec.availabilityPublished - open access


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