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EUVL Gen 2.0: Key requirements for constraining semiconductor cost in advanced technology node manufacturing

dc.contributor.authorMallik, Arindam
dc.contributor.authorDebacker, Peter
dc.contributor.authorMcIntyre, Greg
dc.contributor.authorKim, Ryan Ryoung han
dc.contributor.authorRonse, Kurt
dc.date.accessioned2021-10-25T22:50:25Z
dc.date.available2021-10-25T22:50:25Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31272
dc.sourceIIOimport
dc.titleEUVL Gen 2.0: Key requirements for constraining semiconductor cost in advanced technology node manufacturing
dc.typeProceedings paper
dc.contributor.imecauthorMallik, Arindam
dc.contributor.imecauthorDebacker, Peter
dc.contributor.imecauthorKim, Ryan Ryoung han
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecMallik, Arindam::0000-0002-0742-9366
dc.contributor.orcidimecDebacker, Peter::0000-0003-3825-5554
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1058326
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography IX
dc.source.conferencedate25/02/2018
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2297447
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10586


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