Show simple item record

Highly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface

dc.contributor.authorMatsu, Takayuki
dc.contributor.authorLi, Yi
dc.contributor.authorHsu, Mark
dc.contributor.authorMerckling, Clement
dc.contributor.authorOulton, Rupert
dc.contributor.authorCohen, Lesley
dc.contributor.authorMaier, Stefan
dc.date.accessioned2021-10-25T23:12:57Z
dc.date.available2021-10-25T23:12:57Z
dc.date.issued2018
dc.identifier.issn1616-301X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31314
dc.sourceIIOimport
dc.titleHighly-stable plasmon induced hot hole transfer into silicon via a SrTiO3 passivation interface
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage1705829
dc.source.journalAdvanced Functional Materials
dc.source.issue17
dc.source.volume28
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201705829
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record