dc.contributor.author | Mertens, Hans | |
dc.contributor.author | Ritzenthaler, Romain | |
dc.contributor.author | Mocuta, Dan | |
dc.contributor.author | Horiguchi, Naoto | |
dc.date.accessioned | 2021-10-25T23:24:50Z | |
dc.date.available | 2021-10-25T23:24:50Z | |
dc.date.issued | 2018 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/31337 | |
dc.source | IIOimport | |
dc.title | Gate-all-around transistors based on vertically stacked Si nanowires: recent progress in CMOS integration and in advanced inline metrology | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Mertens, Hans | |
dc.contributor.imecauthor | Ritzenthaler, Romain | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Ritzenthaler, Romain::0000-0002-8615-3272 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 155 | |
dc.source.endpage | 156 | |
dc.source.conference | 50th International Conference on Solid State Devices and Materials - SSDM | |
dc.source.conferencedate | 9/09/2018 | |
dc.source.conferencelocation | Tokyo Japan | |
imec.availability | Published - open access | |