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Analysis of III-nitride device heterostructures using APT

dc.contributor.authorMorris, Richard
dc.contributor.authorCuduvally, Ramya
dc.contributor.authorZhao, Ming
dc.contributor.authorvan der Heide, Paul
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-25T23:46:08Z
dc.date.available2021-10-25T23:46:08Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31376
dc.sourceIIOimport
dc.titleAnalysis of III-nitride device heterostructures using APT
dc.typeProceedings paper
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorCuduvally, Ramya
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorvan der Heide, Paul
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecvan der Heide, Paul::0000-0001-6292-0329
dc.source.peerreviewno
dc.source.conference10th European Atom Probe Workshop
dc.source.conferencedate7/11/2018
dc.source.conferencelocationDusseldorf Germany
imec.availabilityPublished - imec


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