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Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth

dc.contributor.authorMurota, Junichi
dc.contributor.authorYamamoto, Yuchi
dc.contributor.authorCostina, Ioan
dc.contributor.authorTillack, Bernd
dc.contributor.authorLe Thanh, Vin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-25T23:54:17Z
dc.date.available2021-10-25T23:54:17Z
dc.date.issued2018-05
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31391
dc.sourceIIOimport
dc.titleAtomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.identifier.doi10.1149/2.0071806jss
dc.source.peerreviewyes
dc.source.beginpageP305
dc.source.endpageP310
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue6
dc.source.volume7
dc.identifier.urlhttp://jss.ecsdl.org/content/7/6/P305.short
imec.availabilityPublished - imec


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