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Effect of annealing ferroelectric HfO2 thin films: In situ, high temperature X-ray diffraction

dc.contributor.authorPark, Min Hyuk
dc.contributor.authorChung, Ching-Chang
dc.contributor.authorSchenk, Tony
dc.contributor.authorRichter, Claudia
dc.contributor.authorOpsomer, Karl
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorJones, Jacob
dc.contributor.authorMikolajick, Thomas
dc.contributor.authorSchroeder, Uwe
dc.date.accessioned2021-10-26T00:50:22Z
dc.date.available2021-10-26T00:50:22Z
dc.date.issued2018
dc.identifier.issn2199-160X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31490
dc.sourceIIOimport
dc.titleEffect of annealing ferroelectric HfO2 thin films: In situ, high temperature X-ray diffraction
dc.typeJournal article
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.source.peerreviewyes
dc.source.beginpage1800091-1
dc.source.endpage1800091-10
dc.source.journalAdvanced Electronic Materials
dc.source.issue7
dc.source.volume4
dc.identifier.urlhttps://doi.org/10.1002/aelm.201800091
imec.availabilityPublished - imec


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