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The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

dc.contributor.authorRackauskas, Ben
dc.contributor.authorJ. Uren, Michael
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorKuball, Martin
dc.date.accessioned2021-10-26T01:45:36Z
dc.date.available2021-10-26T01:45:36Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31583
dc.sourceIIOimport
dc.titleThe impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1580
dc.source.endpage1583
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume39
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8450043
imec.availabilityPublished - imec


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