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Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

dc.contributor.authorResta, Giovanni
dc.contributor.authorBalaji, Yashwanth
dc.contributor.authorLin, Dennis
dc.contributor.authorRadu, Iuliana
dc.contributor.authorCatthoor, Francky
dc.contributor.authorGaillardon, Pierre-Emmanuel
dc.contributor.authorDe Micheli, Giovanni
dc.date.accessioned2021-10-26T02:28:24Z
dc.date.available2021-10-26T02:28:24Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31650
dc.sourceIIOimport
dc.titleDoping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors
dc.typeProceedings paper
dc.contributor.imecauthorBalaji, Yashwanth
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorCatthoor, Francky
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecCatthoor, Francky::0000-0002-3599-8515
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference76th Device Research Conference - DRC
dc.source.conferencedate24/06/2018
dc.source.conferencelocationSanta Barbara, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8442152
imec.availabilityPublished - open access


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