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Behavior of hot hole stressed SiO2/Si interface at elevated temperatures

dc.contributor.authorZhang, Jenny
dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-01T09:52:21Z
dc.date.available2021-10-01T09:52:21Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3169
dc.sourceIIOimport
dc.titleBehavior of hot hole stressed SiO2/Si interface at elevated temperatures
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage843
dc.source.endpage850
dc.source.journalJournal of Applied Physics
dc.source.issue2
dc.source.volume83
imec.availabilityPublished - open access


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