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Electrically active defects in plated crystalline silicon n+p solar cells: a DLTS perspective

dc.contributor.authorSimoen, Eddy
dc.contributor.authorDang Thi Thuy, Chi
dc.contributor.authorLabie, Riet
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-26T03:54:03Z
dc.date.available2021-10-26T03:54:03Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31783
dc.sourceIIOimport
dc.titleElectrically active defects in plated crystalline silicon n+p solar cells: a DLTS perspective
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDang Thi Thuy, Chi
dc.contributor.imecauthorLabie, Riet
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLabie, Riet::0000-0002-1401-1291
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage149
dc.source.endpage160
dc.source.conferenceHigh Purity and High Mobility Semiconductors 15
dc.source.conferencedate13/05/2018
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/86/10/137.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 86, Issue 10


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