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On the low-frequency noise of high-k gate stacks: what did we learn?

dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-26T03:57:25Z
dc.date.available2021-10-26T03:57:25Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31788
dc.sourceIIOimport
dc.titleOn the low-frequency noise of high-k gate stacks: what did we learn?
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference14th International Conference on Solid-State and Integrated Cicruit Technology - ICSICT
dc.source.conferencedate31/10/2018
dc.source.conferencelocationQingdao China
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8565820
imec.availabilityPublished - open access


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