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Dry etch damage in n-type crystalline silicon wafers assessed by Deep-Level Transient Spectroscopy

dc.contributor.authorSimoen, Eddy
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorUddin, MD Gius
dc.contributor.authorGordon, Ivan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorWang, Chong
dc.contributor.authorLi, Wei
dc.date.accessioned2021-10-26T03:58:04Z
dc.date.available2021-10-26T03:58:04Z
dc.date.issued2018
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31789
dc.sourceIIOimport
dc.titleDry etch damage in n-type crystalline silicon wafers assessed by Deep-Level Transient Spectroscopy
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorWang, Chong
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage41201
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue4
dc.source.volume36
imec.availabilityPublished - imec


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