dc.contributor.author | Alves Donaton, Ricardo | |
dc.contributor.author | Jin, S. | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Maex, Karen | |
dc.contributor.author | Vantomme, Andre | |
dc.contributor.author | Langouche, G. | |
dc.date.accessioned | 2021-10-06T10:40:54Z | |
dc.date.available | 2021-10-06T10:40:54Z | |
dc.date.issued | 1999 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3182 | |
dc.source | IIOimport | |
dc.title | Influence of SiGe thickness on the Co/SiGe/Si solid state reaction | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | Maex, Karen | |
dc.contributor.imecauthor | Vantomme, Andre | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 151 | |
dc.source.endpage | 156 | |
dc.source.conference | Advanced Interconnects and Contacts | |
dc.source.conferencedate | 05/04/1999 | |
dc.source.conferencelocation | San Francisco, CA USA | |
imec.availability | Published - open access | |
imec.internalnotes | MRS Symposium Proceedings; Vol. 564 | |