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Area-selective atomic layer deposition of TiN, TiO2, and HfO2 on silicon ntride with inhibition on amorphous carbon

dc.contributor.authorStevens, Eric
dc.contributor.authorTomczak, Yoann
dc.contributor.authorChan, BT
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorParsons, Gregory
dc.contributor.authorDelabie, Annelies
dc.date.accessioned2021-10-26T04:41:28Z
dc.date.available2021-10-26T04:41:28Z
dc.date.issued2018
dc.identifier.issn0897-4756
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31856
dc.sourceIIOimport
dc.titleArea-selective atomic layer deposition of TiN, TiO2, and HfO2 on silicon ntride with inhibition on amorphous carbon
dc.typeJournal article
dc.contributor.imecauthorTomczak, Yoann
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.source.peerreviewyes
dc.source.beginpage3223
dc.source.endpage3232
dc.source.journalChemistry of Materials
dc.source.issue10
dc.source.volume30
dc.identifier.urlhttps://pubs.acs.org/doi/10.1021/acs.chemmater.8b00017
imec.availabilityPublished - imec


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