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Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors

dc.contributor.authorStockman, Arno
dc.contributor.authorMasin, Fabrizio
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorMoens, Peter
dc.date.accessioned2021-10-26T04:44:04Z
dc.date.available2021-10-26T04:44:04Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31860
dc.sourceIIOimport
dc.titleGate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
dc.typeJournal article
dc.contributor.imecauthorStockman, Arno
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorMoens, Peter
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5365
dc.source.endpage5372
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8525132
imec.availabilityPublished - open access


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