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Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
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Authors
Stockman, Arno
;
Masin, Fabrizio
;
Meneghini, Matteo
;
Zanoni, Enrico
;
Meneghesso, Gaudenzio
;
Bakeroot, Benoit
;
Moens, Peter
ISSN
0018-9383
Issue
12
Journal
IEEE Transactions on Electron Devices
Volume
65
Title
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Publication type
Journal article
Embargo date
9999-12-31
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