Publication:

Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors

Date

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-4392-1777
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department72929395-79e5-42ba-a500-a183c7261aa6
cris.virtualsource.departmentdc976311-c8c1-48f6-9557-3dbf30966b9e
cris.virtualsource.department1232becf-09ae-4ca9-aabb-94c3b5f076d6
cris.virtualsource.orcid72929395-79e5-42ba-a500-a183c7261aa6
cris.virtualsource.orciddc976311-c8c1-48f6-9557-3dbf30966b9e
cris.virtualsource.orcid1232becf-09ae-4ca9-aabb-94c3b5f076d6
dc.contributor.authorStockman, Arno
dc.contributor.authorMasin, Fabrizio
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorMoens, Peter
dc.contributor.imecauthorStockman, Arno
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorMoens, Peter
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2021-10-26T04:44:04Z
dc.date.available2021-10-26T04:44:04Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31860
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8525132
dc.source.beginpage5365
dc.source.endpage5372
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume65
dc.title

Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
40631.pdf
Size:
1.85 MB
Format:
Adobe Portable Document Format
Publication available in collections: