Publication:
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Date
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0003-4392-1777 | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtualsource.department | 72929395-79e5-42ba-a500-a183c7261aa6 | |
| cris.virtualsource.department | dc976311-c8c1-48f6-9557-3dbf30966b9e | |
| cris.virtualsource.department | 1232becf-09ae-4ca9-aabb-94c3b5f076d6 | |
| cris.virtualsource.orcid | 72929395-79e5-42ba-a500-a183c7261aa6 | |
| cris.virtualsource.orcid | dc976311-c8c1-48f6-9557-3dbf30966b9e | |
| cris.virtualsource.orcid | 1232becf-09ae-4ca9-aabb-94c3b5f076d6 | |
| dc.contributor.author | Stockman, Arno | |
| dc.contributor.author | Masin, Fabrizio | |
| dc.contributor.author | Meneghini, Matteo | |
| dc.contributor.author | Zanoni, Enrico | |
| dc.contributor.author | Meneghesso, Gaudenzio | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Moens, Peter | |
| dc.contributor.imecauthor | Stockman, Arno | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Moens, Peter | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.date.accessioned | 2021-10-26T04:44:04Z | |
| dc.date.available | 2021-10-26T04:44:04Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 2018 | |
| dc.identifier.issn | 0018-9383 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/31860 | |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8525132 | |
| dc.source.beginpage | 5365 | |
| dc.source.endpage | 5372 | |
| dc.source.issue | 12 | |
| dc.source.journal | IEEE Transactions on Electron Devices | |
| dc.source.volume | 65 | |
| dc.title | Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | Original bundle
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| Publication available in collections: |