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Regular and inverted operating regimes in TiN/a-Si/TiOx/TiN RRAM devices

dc.contributor.authorSubhechha, Subhali
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGoux, Ludovic
dc.contributor.authorClima, Sergiu
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-26T04:56:39Z
dc.date.available2021-10-26T04:56:39Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31879
dc.sourceIIOimport
dc.titleRegular and inverted operating regimes in TiN/a-Si/TiOx/TiN RRAM devices
dc.typeJournal article
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage351
dc.source.endpage354
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume39
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8274938/
imec.availabilityPublished - open access


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