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Improved staggered through silicon via inductors for RF and power applications

dc.contributor.authorSun, Xiao
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-26T05:00:04Z
dc.date.available2021-10-26T05:00:04Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31884
dc.sourceIIOimport
dc.titleImproved staggered through silicon via inductors for RF and power applications
dc.typeProceedings paper
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1692
dc.source.endpage1697
dc.source.conferenceIEEE 68th Electronic Components and Technology Conference - ECTC
dc.source.conferencedate29/05/2018
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8429767
imec.availabilityPublished - open access


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