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Improvement of InGaAs interface properties by H2O-based La2O3

dc.contributor.authorSuzuki, Rena
dc.contributor.authorYoshida, Shinichi
dc.contributor.authorSasaki, Toru
dc.contributor.authorOshiyama, Itaru
dc.contributor.authorHirano, Tomoyuki
dc.contributor.authorSaito, Masaki
dc.contributor.authorOhno, Keiichi
dc.contributor.authorIwamoto, Hayato
dc.contributor.authorFranco, Jacopo
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorCott, Daire
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVais, Abhitosh
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-26T05:01:22Z
dc.date.available2021-10-26T05:01:22Z
dc.date.issued2018-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31886
dc.sourceIIOimport
dc.titleImprovement of InGaAs interface properties by H2O-based La2O3
dc.typeMeeting abstract
dc.contributor.imecauthorSasaki, Toru
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conferenceSemiconductor Interface Specialists Conference - SISC
dc.source.conferencedate5/12/2018
dc.source.conferencelocationSan Diego USA
dc.identifier.urlhttp://www.ieeesisc.org/programs/2018_SISC_technical_preliminary-program.pdf
imec.availabilityPublished - imec


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