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dc.contributor.authorTajalli, A.
dc.contributor.authorStockman, Arno
dc.contributor.authorMeneghini, M.
dc.contributor.authorMouhoubi, S.
dc.contributor.authorBanerjee, A.
dc.contributor.authorGerardin, S.
dc.contributor.authorBagatin, M.
dc.contributor.authorPaccagnella, A.
dc.contributor.authorZanoni, E.
dc.contributor.authorTack, M.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorMoens, P.
dc.contributor.authorMeneghesso, G.
dc.date.accessioned2021-10-26T05:14:18Z
dc.date.available2021-10-26T05:14:18Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31907
dc.sourceIIOimport
dc.titleDynamic-ron control via proton irradiation in AlGaN/GaN transistors
dc.typeProceedings paper
dc.contributor.imecauthorStockman, Arno
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage92
dc.source.endpage95
dc.source.conference30th International Symposium on Power Semiconductor Devices & ICs - ISPSD
dc.source.conferencedate13/05/2018
dc.source.conferencelocationChicago, IL USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8393610
imec.availabilityPublished - open access


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