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Comparison between short channel bulk (silicon) and body-tied partially depleted SOI nMOS for high frequency low voltage analog circuit design

dc.contributor.authorBabcock, J. A.
dc.contributor.authorFrancis, P.
dc.contributor.authorØlgaard, C.
dc.contributor.authorHaggag, H.
dc.contributor.authorDarmawan, J. A.
dc.contributor.authorArcher, D. M.
dc.contributor.authorJansen, Philippe
dc.contributor.authorLeeman, Marc
dc.contributor.authorSchroder, D. K.
dc.date.accessioned2021-10-06T10:41:11Z
dc.date.available2021-10-06T10:41:11Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3196
dc.sourceIIOimport
dc.titleComparison between short channel bulk (silicon) and body-tied partially depleted SOI nMOS for high frequency low voltage analog circuit design
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage208
dc.source.endpage211
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
imec.availabilityPublished - imec


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