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Nanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistry

dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorLaitinen, Mikko
dc.contributor.authorSajavaara, Timo
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorConard, Thierry
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorKelly, John
dc.date.accessioned2021-10-26T06:46:59Z
dc.date.available2021-10-26T06:46:59Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32045
dc.sourceIIOimport
dc.titleNanoscale etching of GaAs and InP in acidic H2O2 solution: a striking contrast in kinetics and surface chemistry
dc.typeProceedings paper
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewyes
dc.source.beginpage48
dc.source.endpage51
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate2/09/2018
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://www.scientific.net/SSP.282.48
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 282


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