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Behaviour of metallic contaminants during MOS processing

dc.contributor.authorBearda, Twan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorLoewenstein, Lee
dc.contributor.authorKnotter, Martin
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-06T10:41:50Z
dc.date.available2021-10-06T10:41:50Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3214
dc.sourceIIOimport
dc.titleBehaviour of metallic contaminants during MOS processing
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage11
dc.source.endpage14
dc.source.conferenceUltra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access


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