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dc.contributor.authorVereecke, Guy
dc.contributor.authorDe Coster, Hanne
dc.contributor.authorVan Alphen, Senne
dc.contributor.authorCarolan, Patrick
dc.contributor.authorBender, Hugo
dc.contributor.authorWillems, Kherim
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorVan Dorpe, Pol
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorHolsteyns, Frank
dc.date.accessioned2021-10-26T08:24:14Z
dc.date.available2021-10-26T08:24:14Z
dc.date.issued2018
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32184
dc.sourceIIOimport
dc.titleWet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors
dc.typeJournal article
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorDe Coster, Hanne
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorWillems, Kherim
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorVan Dorpe, Pol
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecDe Coster, Hanne::0000-0002-5968-7703
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.contributor.orcidimecWillems, Kherim::0000-0003-1341-1581
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Dorpe, Pol::0000-0003-0918-1664
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage56
dc.source.endpage61
dc.source.journalMicroelectronic Engineering
dc.source.volume200
dc.identifier.urlhttps://www.sciencedirect.com/science/article/abs/pii/S0167931718304544
imec.availabilityPublished - imec


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