Show simple item record

Properties of p-n diodes made in polysilicon layers with intermediate grain size

dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorNijs, Johan
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-06T10:42:00Z
dc.date.available2021-10-06T10:42:00Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3218
dc.sourceIIOimport
dc.titleProperties of p-n diodes made in polysilicon layers with intermediate grain size
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage577
dc.source.endpage582
dc.source.journalDiffusion and Defect Data. Part B: Solid State Phenomena
dc.source.volume67-68
imec.availabilityPublished - imec
imec.internalnotesProceedings of the 5th International Conference on Polycrystalline Semiconductors (POLYSE'98). 13-18 Sept. 1998; Schwabisch Gmund, Germany


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record