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dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorKohen, David
dc.contributor.authorFolkersma, Steven
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorSchaekers, Marc
dc.contributor.authorTolle, John
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCapogreco, Elena
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLanger, Robert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-26T08:51:20Z
dc.date.available2021-10-26T08:51:20Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32221
dc.sourceIIOimport
dc.titleGe:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
dc.typeProceedings paper
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorFolkersma, Steven
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage179
dc.source.endpage180
dc.source.conference50th Solid State Devices and Materials Conference - SSDM
dc.source.conferencedate9/09/2018
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access


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