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dc.contributor.authorWang, Pengfei
dc.contributor.authorZhang, Enxia
dc.contributor.authorChuang, Kent
dc.contributor.authorLiao, Wenjun
dc.contributor.authorGong, Huiqi
dc.contributor.authorWang, Pan
dc.contributor.authorArutt, Charles N
dc.contributor.authorNi, Kai
dc.contributor.authorMcCurdy, Mike
dc.contributor.authorVerbauwhede, Ingrid
dc.contributor.authorBury, Erik
dc.contributor.authorLinten, Dimitri
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorSchrimpf, Ron
dc.contributor.authorReed, Robert
dc.date.accessioned2021-10-26T09:07:35Z
dc.date.available2021-10-26T09:07:35Z
dc.date.issued2018
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32243
dc.sourceIIOimport
dc.titleX-Ray and proton radiation effects on 40 nm CMOS physically unclonable function devices
dc.typeJournal article
dc.contributor.imecauthorChuang, Kent
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.beginpage1519
dc.source.endpage1524
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue8
dc.source.volume65
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8244298/
imec.availabilityPublished - imec
imec.internalnotesRADECS 2017 paper, Cern, Geneva


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