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Monolithically integrated E-mode GaN-on-SOI gate driver with power GaN-HEMT for MHz-switching

dc.contributor.authorYamashita, Yuki
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorKobayashi, Kazutoshi
dc.date.accessioned2021-10-26T10:04:07Z
dc.date.available2021-10-26T10:04:07Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32320
dc.sourceIIOimport
dc.titleMonolithically integrated E-mode GaN-on-SOI gate driver with power GaN-HEMT for MHz-switching
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage231
dc.source.endpage236
dc.source.conferenceIEEE 6th Workshop on Wide Bandgap Power Devices and Applications - WiPDA
dc.source.conferencedate31/10/2018
dc.source.conferencelocationAtlanta, GA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8569057
imec.availabilityPublished - imec


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