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Impact of ALD TiN capping layer on interface trap and channel hot carrier reliability of HKMG nMOSFETs

dc.contributor.authorYang, Hong
dc.contributor.authorLuo, Weichun
dc.contributor.authorZhou, Longda
dc.contributor.authorXu, Hao
dc.contributor.authorTang, Bo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYin, Huaxiang
dc.contributor.authorZhu, Huilong
dc.contributor.authorZhao, Chao
dc.contributor.authorWang, Wenwu
dc.contributor.authorYe, Tianchun
dc.date.accessioned2021-10-26T10:06:11Z
dc.date.available2021-10-26T10:06:11Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32323
dc.sourceIIOimport
dc.titleImpact of ALD TiN capping layer on interface trap and channel hot carrier reliability of HKMG nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorXu, Hao
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1129
dc.source.endpage1132
dc.source.journalIEEE Electron Device Letters
dc.source.issue8
dc.source.volume39
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8386832
imec.availabilityPublished - open access


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