dc.contributor.author | Yang, Hong | |
dc.contributor.author | Luo, Weichun | |
dc.contributor.author | Zhou, Longda | |
dc.contributor.author | Xu, Hao | |
dc.contributor.author | Tang, Bo | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Yin, Huaxiang | |
dc.contributor.author | Zhu, Huilong | |
dc.contributor.author | Zhao, Chao | |
dc.contributor.author | Wang, Wenwu | |
dc.contributor.author | Ye, Tianchun | |
dc.date.accessioned | 2021-10-26T10:06:11Z | |
dc.date.available | 2021-10-26T10:06:11Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/32323 | |
dc.source | IIOimport | |
dc.title | Impact of ALD TiN capping layer on interface trap and channel hot carrier reliability of HKMG nMOSFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Xu, Hao | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1129 | |
dc.source.endpage | 1132 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 8 | |
dc.source.volume | 39 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8386832 | |
imec.availability | Published - open access | |