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GaN on polycrystalline AlN substrates for power device applications

dc.contributor.authorYuan, Chao
dc.contributor.authorPomeroy, James W.
dc.contributor.authorUren, Michael J.
dc.contributor.authorGeens, Karen
dc.contributor.authorStoffels, Steve
dc.contributor.authorKuball, Martin
dc.date.accessioned2021-10-26T10:23:18Z
dc.date.available2021-10-26T10:23:18Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32346
dc.sourceIIOimport
dc.titleGaN on polycrystalline AlN substrates for power device applications
dc.typeMeeting abstract
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.source.peerreviewyes
dc.source.beginpageThP-CR-35
dc.source.conferenceInternational workshop on Nitride Semiconductors - IWN
dc.source.conferencedate11/11/2018
dc.source.conferencelocationKanazawa Japan
dc.identifier.urlhttp://www.iwn2018.jp/IWN2018-Program.pdf
imec.availabilityPublished - imec


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