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Thermal stability of TiN/Ti/p+-Si0.3Ge0.7 contact with ultralow contact resistivity

dc.contributor.authorZhang, Jian
dc.contributor.authorYu, Hao
dc.contributor.authorWang, Linlin
dc.contributor.authorSchaekers, Marc
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJiang, Yu-long
dc.date.accessioned2021-10-26T10:39:45Z
dc.date.available2021-10-26T10:39:45Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32369
dc.sourceIIOimport
dc.titleThermal stability of TiN/Ti/p+-Si0.3Ge0.7 contact with ultralow contact resistivity
dc.typeJournal article
dc.contributor.imecauthorZhang, Jian
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage83
dc.source.endpage86
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume39
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8101525/
imec.availabilityPublished - open access


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