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Influence of device geometry on ESD performance for deep submicron CMOS technology

dc.contributor.authorBock, Karlheinz
dc.contributor.authorKeppens, Bart
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorChing, L. Y.
dc.contributor.authorNaem, Abdalla
dc.date.accessioned2021-10-06T10:43:12Z
dc.date.available2021-10-06T10:43:12Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3239
dc.sourceIIOimport
dc.titleInfluence of device geometry on ESD performance for deep submicron CMOS technology
dc.typeProceedings paper
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage83
dc.source.endpage93
dc.source.conferenceTagungsband 6th ESD-Forum; October 1999; München, Germany.
imec.availabilityPublished - imec


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