dc.contributor.author | Arimura, Hiroaki | |
dc.contributor.author | Wostyn, Kurt | |
dc.contributor.author | Ragnarsson, Lars-Ake | |
dc.contributor.author | Capogreco, Elena | |
dc.contributor.author | Vaisman Chasin, Adrian | |
dc.contributor.author | Conard, Thierry | |
dc.contributor.author | Brus, Stephan | |
dc.contributor.author | Favia, Paola | |
dc.contributor.author | Franco, Jacopo | |
dc.contributor.author | Mitard, Jerome | |
dc.contributor.author | Demuynck, Steven | |
dc.contributor.author | Horiguchi, Naoto | |
dc.date.accessioned | 2021-10-27T07:27:08Z | |
dc.date.available | 2021-10-27T07:27:08Z | |
dc.date.issued | 2019 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/32454 | |
dc.source | IIOimport | |
dc.title | Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Arimura, Hiroaki | |
dc.contributor.imecauthor | Wostyn, Kurt | |
dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
dc.contributor.imecauthor | Capogreco, Elena | |
dc.contributor.imecauthor | Vaisman Chasin, Adrian | |
dc.contributor.imecauthor | Conard, Thierry | |
dc.contributor.imecauthor | Brus, Stephan | |
dc.contributor.imecauthor | Favia, Paola | |
dc.contributor.imecauthor | Franco, Jacopo | |
dc.contributor.imecauthor | Mitard, Jerome | |
dc.contributor.imecauthor | Demuynck, Steven | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Wostyn, Kurt::0000-0003-3995-0292 | |
dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
dc.contributor.orcidimec | Vaisman Chasin, Adrian::0000-0002-9940-0260 | |
dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
dc.contributor.orcidimec | Favia, Paola::0000-0002-1019-3497 | |
dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
dc.contributor.orcidimec | Mitard, Jerome::0000-0002-7422-079X | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 677 | |
dc.source.endpage | 680 | |
dc.source.conference | IEEE - International Electron Devices Meeting (IEDM) | |
dc.source.conferencedate | 7/07/2019 | |
dc.source.conferencelocation | San Francisco, CA USA | |
imec.availability | Published - imec | |