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Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si

dc.contributor.authorArimura, Hiroaki
dc.contributor.authorWostyn, Kurt
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorCapogreco, Elena
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorConard, Thierry
dc.contributor.authorBrus, Stephan
dc.contributor.authorFavia, Paola
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMitard, Jerome
dc.contributor.authorDemuynck, Steven
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-27T07:27:08Z
dc.date.available2021-10-27T07:27:08Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32454
dc.sourceIIOimport
dc.titleGe oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage677
dc.source.endpage680
dc.source.conferenceIEEE - International Electron Devices Meeting (IEDM)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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