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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-27T07:28:37Z
dc.date.available2021-10-27T07:28:37Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32479
dc.sourceIIOimport
dc.titleTrading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage419
dc.source.endpage422
dc.source.conferenceProceedings of the 31th International Symposium on Power Semiconductor Devices & ICs
dc.source.conferencedate19/05/2019
dc.source.conferencelocationShanghai China
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8757629
imec.availabilityPublished - open access


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