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Electrical characteristics of n-type GaN grown by LP-MOVPE

dc.contributor.authorBougrioua, Zahia
dc.contributor.authorFarvacque, J. L.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorThrush, E. J.
dc.date.accessioned2021-10-06T10:44:46Z
dc.date.available2021-10-06T10:44:46Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3261
dc.sourceIIOimport
dc.titleElectrical characteristics of n-type GaN grown by LP-MOVPE
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference1st Arab Congress on Materials Science - ACMS-1
dc.source.conferencedate25/10/1999
dc.source.conferencelocationSidi Bel Abbès Algeria
imec.availabilityPublished - open access


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