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ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

dc.contributor.authorCanato, E
dc.contributor.authorMeneghini, M.
dc.contributor.authorNardo, A.
dc.contributor.authorMasin, F.
dc.contributor.authorBarbato, F.
dc.contributor.authorBarbato, M.
dc.contributor.authorStockman, Arno
dc.contributor.authorBanerjee, A.
dc.contributor.authorMoens, P.
dc.contributor.authorZanoni, E.
dc.contributor.authorMeneghesso, G.
dc.date.accessioned2021-10-27T07:47:45Z
dc.date.available2021-10-27T07:47:45Z
dc.date.issued2019
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32632
dc.sourceIIOimport
dc.titleESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
dc.typeJournal article
dc.contributor.imecauthorStockman, Arno
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage113334
dc.source.journalMicroelectronics Reliability
dc.source.volume100
imec.availabilityPublished - open access


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