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The influence of AlN nucleation layer on Radio Frequency (RF) transmission loss of GaN-on-Si structure

dc.contributor.authorChang, Shane
dc.contributor.authorZhao, Ming
dc.contributor.authorSpampinato, Valentina
dc.contributor.authorFranquet, Alexis
dc.contributor.authorHein, Do
dc.contributor.authorUedono, Akira
dc.contributor.authorChang, Li
dc.date.accessioned2021-10-27T07:57:34Z
dc.date.available2021-10-27T07:57:34Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32684
dc.sourceIIOimport
dc.titleThe influence of AlN nucleation layer on Radio Frequency (RF) transmission loss of GaN-on-Si structure
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorSpampinato, Valentina
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecSpampinato, Valentina::0000-0003-3225-6740
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageGP02.01
dc.source.conference13th International Conference on Nitride Semiconductors (ICNS-13)
dc.source.conferencedate7/07/2019
dc.source.conferencelocationBellevue USA
imec.availabilityPublished - open access


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