dc.contributor.author | Chen, Shih-Hung | |
dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Mertens, Hans | |
dc.contributor.author | Mocuta, Anda | |
dc.contributor.author | Horiguchi, Naoto | |
dc.date.accessioned | 2021-10-27T07:59:36Z | |
dc.date.available | 2021-10-27T07:59:36Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 1530-4388 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/32694 | |
dc.source | IIOimport | |
dc.title | ESD protection diodes in bulk Si gate-all- around vertically stacked horizontal nanowire technology | |
dc.type | Journal article | |
dc.contributor.imecauthor | Chen, Shih-Hung | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Mertens, Hans | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 112 | |
dc.source.endpage | 119 | |
dc.source.journal | IEEE Transactions on Device and Materials Reliability | |
dc.source.issue | 1 | |
dc.source.volume | 19 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/8576641 | |
imec.availability | Published - imec | |