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Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers

dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorNuytten, Thomas
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPezzoli, Fabio
dc.contributor.authorBonera, Emiliano
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-27T08:49:20Z
dc.date.available2021-10-27T08:49:20Z
dc.date.issued2019
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32890
dc.sourceIIOimport
dc.titleInsights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers
dc.typeJournal article
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.embargo9999-12-31
dc.identifier.doi10.1149/2.0181903jss
dc.source.peerreviewyes
dc.source.beginpageP209
dc.source.endpageP216
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue4
dc.source.volume8
imec.availabilityPublished - open access


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