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Carrier profiling with Fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP

dc.contributor.authorDixon-Luinenburg, Oberon
dc.contributor.authorCelano, Umberto
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorParedis, Kristof
dc.date.accessioned2021-10-27T08:54:32Z
dc.date.available2021-10-27T08:54:32Z
dc.date.issued2019
dc.identifier.issn0304-3991
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32907
dc.sourceIIOimport
dc.titleCarrier profiling with Fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP
dc.typeJournal article
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorParedis, Kristof
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecParedis, Kristof::0000-0002-5163-4164
dc.source.peerreviewyes
dc.source.beginpage112809
dc.source.journalUltramicroscopy
dc.source.volume206
dc.identifier.urlhttps://doi.org/10.1016/j.ultramic.2019.06.009
imec.availabilityPublished - imec


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