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3D FinFET gate etch for advanced CMOS scaling

dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorMarinov, Daniil
dc.contributor.authorHody, Hubert
dc.contributor.authorMertens, Hans
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorDemuynck, Steven
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-27T08:59:07Z
dc.date.available2021-10-27T08:59:07Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32922
dc.sourceIIOimport
dc.title3D FinFET gate etch for advanced CMOS scaling
dc.typeOral presentation
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewno
dc.source.conference11th PESM
dc.source.conferencedate20/05/2019
dc.source.conferencelocationGrenoble France
dc.identifier.urlhttp://pesm2019.insight-outside.fr/index.php?langue=en&onglet=11&acces=&idUser=&emailUser=&messageConfirmation=
imec.availabilityPublished - imec


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