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dc.contributor.authorGarbin, Daniele
dc.contributor.authorDevulder, Wouter
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorClima, Sergiu
dc.contributor.authorOpsomer, Karl
dc.contributor.authorFantini, Andrea
dc.contributor.authorCellier, Daniel
dc.contributor.authorKim, Wan Gee
dc.contributor.authorPakala, Mahendra
dc.contributor.authorCockburn, Andrew
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorDelhougne, Romain
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-27T09:31:17Z
dc.date.available2021-10-27T09:31:17Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33013
dc.sourceIIOimport
dc.titleComposition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
dc.typeProceedings paper
dc.contributor.imecauthorGarbin, Daniele
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorCellier, Daniel
dc.contributor.imecauthorCockburn, Andrew
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGarbin, Daniele::0000-0002-5884-1043
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage823
dc.source.endpage826
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM 2019
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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